Toshiba Semiconductor and Storage RN2911(T5L,F,T)

Enrgtech Part No: ET14928484
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Manufacturer Part No:
RN2911(T5L,F,T)
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Manufacturer: Toshiba Semiconductor and Storage

RN2911-T5L-F-T- Toshiba Semiconductor and Storage RN2911(T5L,F,T)

Product Information

Resistor - Base (R1):

10kOhms

HTSUS:

8541.21.0095

Current - Collector (Ic) (Max):

100mA

Resistor - Emitter Base (R2):

Package / Case:

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce:

120 @ 1mA, 5V

Frequency - Transition:

200MHz

title:

RN2911(T5L,F,T)

Voltage - Collector Emitter Breakdown (Max):

50V

Manufacturer:

Toshiba Semiconductor and Storage

Transistor Type:

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic:

300mV @ 250µA, 5mA

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2911(T5L,F,T). Resistor - Base - 10kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200mw. Moreover, it corresponds to rn2911, a base product number of the product. The product is designated with the ear99 code number.

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