ON Semiconductor NSM21356DW6T1G

NSM21356DW6T1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSM213
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V / 220 @ 2mA, 5V
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Mounting Type:
Surface Mount
Resistor - Base (R1):
47kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
50V, 65V
Packaging:
Tape & Reel (TR)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
230mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSM21356DW6T1G. Base Part Number: nsm213. It features pre-biased bipolar transistor (bjt) 1 npn pre-biased, 1 pnp 50v, 65v 100ma 230mw surface mount sc-88/sc70-6/sot-363. Furthermore, 80 @ 5ma, 10v / 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a 1 npn pre-biased, 1 pnp type. The product is available in surface mount configuration. Resistor - Base - 47kohms. The 250mv @ 300µa, 10ma / 650mv @ 5ma, 100ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v, 65v. In addition, tape & reel (tr) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47kohms. The maximum power of the product is 230mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 19/Dec/2008(PCN Obsolescence/ EOL)
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NSM21356DW6T1G(Datasheets)

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