Base Part Number:
EMF5XV
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V / 270 @ 10mA, 2V
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Mounting Type:
Surface Mount
Resistor - Base (R1):
47kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V, 12V
Packaging:
Tape & Reel (TR)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA, 500mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is EMF5XV6T5. Base Part Number: emf5xv. It features pre-biased bipolar transistor (bjt) 1 npn pre-biased, 1 pnp 50v, 12v 100ma, 500ma 500mw surface mount sot-563. Furthermore, 80 @ 5ma, 10v / 270 @ 10ma, 2v is the minimum DC current gain at given voltage. The transistor is a 1 npn pre-biased, 1 pnp type. The product is available in surface mount configuration. Resistor - Base - 47kohms. The 250mv @ 300µa, 10ma / 250mv @ 10ma, 200ma is the maximum Vce saturation. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v, 12v. In addition, tape & reel (tr) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47kohms. The maximum power of the product is 500mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma, 500ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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