ON Semiconductor MUN5330DW1T1G

MUN5330DW1T1G ON Semiconductor
ON Semiconductor

Product Information

Dimensions:
2.2 x 1.35 x 1mm
Maximum Collector Emitter Saturation Voltage:
0.25 V
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Operating Frequency:
10 kHz
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN + PNP
Maximum Collector Base Voltage:
50 V dc
Maximum Emitter Base Voltage:
6 V
Length:
2.2mm
Maximum DC Collector Current:
100 mA
Pin Count:
6
Minimum DC Current Gain:
3
Mounting Type:
Surface Mount
Maximum Power Dissipation:
385 mW
Maximum Collector Emitter Voltage:
50 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
MUN5330
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
3 @ 5mA, 10V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
1kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 10mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
1kOhms
Power - Max:
250mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MUN5330DW1T1G. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product has a maximum 0.25 v collector emitter saturation voltage . Furthermore, the product is 1.35mm wide. The product offers isolated transistor configuration. It carries 10 khz of maximum operating frequency. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn + pnp type. Additionally, it has 50 v dc maximum collector base voltage. It features a 6 v of maximum emitter base voltage. Its accurate length is 2.2mm. Moreover, it has a maximum DC collector current of 100 ma. It contains 6 pins. It features up to 3 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 385 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 28 weeks of manufacturer standard lead time. Base Part Number: mun5330. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 250mw surface mount sc-88/sc70-6/sot-363. Furthermore, 3 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. Resistor - Base - 1kohms. The 250mv @ 5ma, 10ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 1kohms. The maximum power of the product is 250mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly 30/Jul/2020(PCN Assembly/Origin)
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MUN5330DW1, NSBC113EPDXV6(Datasheets)
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Copper Wire 08/Jun/2009(PCN Design/Specification)

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