Base Part Number:
EMF17
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 20mA, 5V / 180 @ 1mA, 6V
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Frequency - Transition:
250MHz, 140MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
2.2kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Supplier Device Package:
EMT6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Resistor - Emitter Base (R2):
2.2kOhms
Power - Max:
150mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA, 150mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Rohm Semiconductor
