Manufacturer Standard Lead Time:
16 Weeks
Resistor - Base (R1):
2.2 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
250MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Other Names:
RN1905FE(TE85LF)CT
RN1905FE(TE85LF)CT-ND
RN1905FELF(CBCT
RN1905FELF(CTCT
RN1905FELF(CTCT-ND