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Toshiba Semiconductor and Storage RN2905FE,LF(CB

RN2905FE-LF-CB Toshiba Semiconductor and Storage RN2905FE,LF(CB
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Resistor - Base (R1):
2.2 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
200MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
4,000
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Packaging:
Tape & Reel (TR)
Power - Max:
100mW
Other Names:
RN2905FE(TE85L,F) RN2905FE(TE85LF)TR RN2905FE(TE85LF)TR-ND RN2905FE,LF(CT RN2905FELF(CBTR RN2905FELF(CTTR RN2905FELF(CTTR-ND
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2905FE,LF(CB. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 2.2 kohms. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 100mw surface mount es6. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 4,000. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100mw. Alternative Names include rn2905fe(te85l,f) rn2905fe(te85lf)tr rn2905fe(te85lf)tr-nd rn2905fe,lf(ct rn2905felf(cbtr rn2905felf(cttr rn2905felf(cttr-nd.

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FAQs

Yes. You can also search RN2905FE,LF(CB on website for other similar products.
We accept all major payment methods for all products including ET11965429. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with RN2905FE,LF(CB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN2905FE,LF(CB. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN2905FE,LF(CB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11965429 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11965429.
Yes. We ship RN2905FE,LF(CB Internationally to many countries around the world.
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