ON Semiconductor NSBA114TDP6T5G

NSBA114TDP6T5G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSBA114
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SOT-963
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
408mW
Customer Reference:
Package / Case:
SOT-963
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSBA114TDP6T5G. Base Part Number: nsba114. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 408mw surface mount sot-963. Furthermore, 160 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sot-963 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 408mw. Moreover, the product comes in sot-963. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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MUN5115DW1, NSBA114TDxx(Datasheets)
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Wire Bond 01/Dec/2010(PCN Design/Specification)

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