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Toshiba Semiconductor and Storage RN4987FE,LF(CB

RN4987FE-LF-CB Toshiba Semiconductor and Storage RN4987FE,LF(CB
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Resistor - Base (R1):
10 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
250MHz, 200MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Other Names:
RN4987FE(T5LFT)CT RN4987FE(T5LFT)CT-ND RN4987FELF(CBCT RN4987FELF(CTCT RN4987FELF(CTCT-ND
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN4987FE,LF(CB. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 10 kohms. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 250mhz, 200mhz 100mw surface mount es6. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz, 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Alternative Names include rn4987fe(t5lft)ct rn4987fe(t5lft)ct-nd rn4987felf(cbct rn4987felf(ctct rn4987felf(ctct-nd.

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FAQs

Yes. You can also search RN4987FE,LF(CB on website for other similar products.
We accept all major payment methods for all products including ET11603283. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with RN4987FE,LF(CB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN4987FE,LF(CB. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN4987FE,LF(CB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11603283 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11603283.
Yes. We ship RN4987FE,LF(CB Internationally to many countries around the world.
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