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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1909FE(TE85L,F). It has typical 12 weeks of manufacturer standard lead time. Base Part Number: df2s6. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. Furthermore, 70 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. Resistor - Base - 47kohms. The 300mv @ 250µa, 5ma is the maximum Vce saturation. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 22kohms. The maximum power of the product is 100mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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