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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2910FE,LF(CB. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 100mw surface mount es6. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn2910fe(t5lft)ct rn2910fe(t5lft)ct-nd rn2910felf(cbct rn2910felf(ctct rn2910felf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
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