Toshiba Semiconductor and Storage RN4988(T5L,F,T)

RN4988-T5L-F-T- Toshiba Semiconductor and Storage RN4988(T5L,F,T)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
22kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
RoHS Compliant
Resistor - Emitter Base (R2):
47kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
edacadModel:
RN4988(T5L,F,T) Models
Frequency - Transition:
250MHz, 200MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
edacadModelUrl:
/en/models/4305148
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Power - Max:
200mW
Base Product Number:
RN4988
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN4988(T5L,F,T). Resistor - Base - 22kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz, 200mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. Moreover, it corresponds to rn4988, a base product number of the product. The product is designated with the ear99 code number.

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