ON Semiconductor NSVMUN5211DW1T3G

NSVMUN5211DW1T3G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
NSVMUN5211
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10kOhms
Power - Max:
250mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSVMUN5211DW1T3G. It has typical 28 weeks of manufacturer standard lead time. Base Part Number: nsvmun5211. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mw surface mount sc-88/sc70-6/sot-363. Furthermore, 35 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10kohms. The maximum power of the product is 250mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Bond Wire 15/Feb/2019(PCN Assembly/Origin)
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MUN5211DW1, NSBC114EDxx(Datasheets)

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FAQs

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