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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1901FETE85LF. Resistor - Base - 4.7kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. Resistor - Emittor Base (R2) - 4.7kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 npn - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100mw. Moreover, it corresponds to rn1901, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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