Manufacturer Standard Lead Time:
13 Weeks
Base Part Number:
EMD4T2
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
47kOhms, 10kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Supplier Device Package:
EMT6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
150mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Rohm Semiconductor