Minimum DC Current Gain:
80
Transistor Type:
NPN
Dimensions:
1.7 x 1.3 x 0.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.25 V
Typical Resistor Ratio:
1
Transistor Configuration:
Isolated
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
100 kΩ
Base Part Number:
NSBC115
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
100kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
100kOhms
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
