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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1506(TE85L,F). Base Part Number: tbd62083. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) (emitter coupled) 50v 100ma 250mhz 300mw surface mount smv. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) (emitter coupled) type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. Resistor - Base - 4.7kohms. The 300mv @ 250µa, 5ma is the maximum Vce saturation. smv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47kohms. The maximum power of the product is 300mw. Moreover, the product comes in sc-74a, sot-753. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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