Transistor Type:
NPN, PNP
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
385 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Base Voltage:
50 V
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-363
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 (Continuous) mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
MUN5313
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
47kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
250mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
