ON Semiconductor MUN5132DW1T1G

MUN5132DW1T1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
MUN5132
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5mA, 10V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Resistor - Emitter Base (R2):
4.7kOhms
Power - Max:
250mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MUN5132DW1T1G. It has typical 28 weeks of manufacturer standard lead time. Base Part Number: mun5132. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 250mw surface mount sc-88/sc70-6/sot-363. Furthermore, 15 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The product is available in surface mount configuration. Resistor - Base - 4.7kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7kohms. The maximum power of the product is 250mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev Wafer Fab Site Add 2/Nov/2017(PCN Assembly/Origin)
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MUN5132DW1, NSBA143EDxx(Datasheets)

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