Toshiba Semiconductor and Storage 4N25A(SHORT,F)

4N25A-SHORT-F- Toshiba Semiconductor and Storage 4N25A(SHORT,F)
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.49.8000
RoHS Status:
RoHS Compliant
Current - Output / Channel:
100mA
Vce Saturation (Max):
500mV
Operating Temperature:
-55°C ~ 100°C
Input Type:
DC
Package / Case:
6-DIP (0.300", 7.62mm)
Current - DC Forward (If) (Max):
80 mA
Current Transfer Ratio (Min):
20% @ 10mA
Current Transfer Ratio (Max):
-
Rise / Fall Time (Typ):
2µs, 200µs
Output Type:
Transistor with Base
Number of Channels:
1
Voltage - Output (Max):
30V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Voltage - Forward (Vf) (Typ):
1.15V
Voltage - Isolation:
2500Vrms
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
6-DIP
Turn On / Turn Off Time (Typ):
-
Base Product Number:
4N25
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 4N25A(SHORT,F). It is assigned with possible HTSUS value of 8541.49.8000. The product is rohs compliant. It carries 100ma output or channel current. Feature a maximum Vce saturation of 500mv. The product has -55°c ~ 100°c operating temperature range. It carries dc input type. Moreover, the product comes in 6-dip (0.300", 7.62mm). The maximum DC forward current of the product is 80 ma. It has a minimum current transfer ratio of 20% @ 10ma. The typical rise and fall time of the product is 2µs, 200µs. Furthermore, it has atransistor with base output. It is supplied with 1 channels. While the maximum output voltage is 30v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). The typical forward voltage (Vf) of the product is 1.15v. 2500vrms of isolation voltage. The product is available in through hole configuration. 6-dip is the supplier device package value. Moreover, it corresponds to 4n25, a base product number of the product. The product is designated with the ear99 code number.

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4N25/25A/26/27/28 Short(Datasheets)

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