Infineon Technologies T660N24TOFXPSA1

Infineon Technologies

Product Information

HTSUS:
8541.30.0080
Voltage - Off State:
2.6 kV
Voltage - Gate Trigger (Vgt) (Max):
2.2 V
Operating Temperature:
-40°C ~ 125°C
Package / Case:
DO-200AB, B-PUK
Current - Hold (Ih) (Max):
300 mA
REACH Status:
REACH Unaffected
Current - On State (It (RMS)) (Max):
1500 A
Structure:
Single
Package:
Tray
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Gate Trigger (Igt) (Max):
250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
13000A @ 50Hz
Mounting Type:
Clamp On
Current - On State (It (AV)) (Max):
660 A
Series:
-
Number of SCRs, Diodes:
1 SCR
Base Product Number:
T660N
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is T660N24TOFXPSA1. It is assigned with possible HTSUS value of 8541.30.0080. It has an off state voltage of 2.6 kv. While the maximum voltage - gate trigger includes 2.2 v. The product has -40°c ~ 125°c operating temperature range. Moreover, the product comes in do-200ab, b-puk. The maximum hold current is 300 ma. In addition, it is reach unaffected. The maximum 1500 a of on state current. It has a single structure. It is shipped in tray package . Its typical moisture sensitivity level is 1 (unlimited). The maximum gate triggering current is 250 ma. Non rep. current with 50, 60Hz surge included 13000a @ 50hz. The product is available in clamp on configuration. Maximum on state current of 660 a. It consists of 1 scr . Moreover, it corresponds to t660n, a base product number of the product. The product is designated with the ear99 code number.

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T660N(Datasheets)
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Thyristor/Diode Module Label REV 1/Feb/2018(PCN Packaging)

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FAQs

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