Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Diode Technology:
Silicon Junction
Maximum Operating Temperature:
+150 °C
Maximum Forward Voltage Drop:
1.25V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Diode Configuration:
Single
Pin Count:
3
Reverse Recovery Time (trr):
6 ns
HTSUS:
8541.10.0070
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-236-3, SC-59, SOT-23-3
edacadModel:
BAS16LT3G Models
Operating Temperature - Junction:
-55°C ~ 150°C
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1475465
Current - Average Rectified (Io):
200mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
100 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
6 Weeks
Current - Reverse Leakage @ Vr:
1 µA @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Technology:
Standard
Base Product Number:
BAS16
ECCN:
EAR99
The BAS16LT3G is a general-purpose Switching Diode manufactured by ON Semiconductor, a leading supplier of power management, analogue, and sensor solutions. It is a surface-mount device (SMD) widely used in various electronic circuits for signal processing, switching, and protection purposes. The product is a low-power diode with a maximum forward current of 250 mA and a reverse voltage of 75 V.
Why Buy BAS16LT3G, onsemi Switching Diode, SMD?
The BAS16LT3G is a reliable device with high quality and consistency, supplied in a small SOT-23 surface-mount package, which makes it easy to handle and install. In addition, it is manufactured using advanced process technologies and is subjected to rigorous quality control tests to ensure its performance and reliability.
Applications of BAS16LT3G, onsemi SMD, General-Purpose Switching Diode:
Electrical Characteristics:
The BAS16LT3G has a maximum forward voltage drop of 1 V at a forward current of 100 mA. Its reverse leakage current is less than 10 nA at a reverse voltage of 50 V. The device has a reverse recovery time of less than 4ns and a total capacitance of 2.5 pF at a reverse voltage of 0 V. These characteristics make it suitable for high-speed switching applications.
Why Buy from Enrgtech?
Enrgtech stocks the best and most affordable switching diodes from Onsemi, a well-known brand. Visit our website to order your desired products with fast delivery services.
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