NXP BA891,115 Band Switching Diode, 100mA 35V, 2-Pin I-IGIA

BA891-115 NXP BA891,115 Band Switching Diode, 100mA 35V, 2-Pin I-IGIA
NXP

Product Information

Maximum Diode Capacitance:
0.9pF
Dimensions:
1.25 x 0.85 x 0.65mm
Mounting Type:
Surface Mount
Diode Technology:
Silicon Junction
Maximum Forward Current:
100mA
Maximum Series Resistance @ Maximum IF:
0.5 Ω @ 10 mA
Maximum Forward Voltage Drop:
1V
Height:
0.65mm
Width:
0.85mm
Length:
1.25mm
Package Type:
I-IGIA
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Reverse Voltage:
35V
Maximum Operating Temperature:
+150 °C
Diode Configuration:
Single
Pin Count:
2
RoHs Compliant
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This is Band Switching Diode 100mA 35V 2-Pin I-IGIA manufactured by NXP. The manufacturer part number is BA891,115. It has a maximum 0.9pf diode capacitance . The given dimensions of the product include 1.25 x 0.85 x 0.65mm. The product is available in surface mount configuration. The product utilizes silicon junction diode technology. Moreover, the product has a maximum 100ma forward current . It has a maximum 0.5 ω @ 10 ma series resistance @ maximum IF . It features 1v of maximum forward voltage drop. In addition, the height is 0.65mm. Furthermore, the product is 0.85mm wide. Its accurate length is 1.25mm. The package is a sort of i-igia. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. Moreover, the product has a maximum 35v reverse voltage . It has a maximum operating temperature of +150 °c. The diode features a single configuration. It contains 2 pins.

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BA891 Band-switching diode Data Sheet(Technical Reference)

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