Renesas Electronics, R1LV5256ESA-5SI#B1 SRAM Memory, 256kbit, 55ns, 3, 3.3 28-Pin SOP

R1LV5256ESA-5SI-B1 Renesas Electronics, R1LV5256ESA-5SI#B1 SRAM Memory, 256kbit, 55ns, 3, 3.3 28-Pin SOP
R1LV5256ESA-5SI#B1
Renesas Electronics

Product Information

Low Power:
Yes
Dimensions:
11.9 x 8.1 x 1mm
Mounting Type:
Surface Mount
Number of Words:
32K
Organisation:
32K words x 8 bit
Minimum Operating Temperature:
-40 °C
Minimum Operating Supply Voltage:
2.7 V
Number of Bits per Word:
8bit
Height:
1mm
Width:
8.1mm
Length:
11.9mm
Memory Size:
256kbit
Package Type:
SOP
Address Bus Width:
15bit
Maximum Random Access Time:
55ns
Maximum Operating Supply Voltage:
3.6 V
Maximum Operating Temperature:
+85 °C
Pin Count:
28
RoHs Compliant
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This is SRAM Memory 256kbit 55ns 3 3.3 28-Pin SOP manufactured by Renesas Electronics. The manufacturer part number is R1LV5256ESA-5SI#B1. It has low power yes . The given dimensions of the product include 11.9 x 8.1 x 1mm. The product is available in surface mount configuration. It has 32k words . The product has 32k words x 8 bit organisation configuration. Whereas, the minimum operating temperature of the product is -40 °c. While its minimum operating supply voltage is 2.7 v. It exhibits 8bit per word . In addition, the height is 1mm. Furthermore, the product is 8.1mm wide. Its accurate length is 11.9mm. It holds a typical memory size of 256kbit. The package is a sort of sop. Its address bus has 15bit width . The product exhibits a maximum 55ns random access time . It has 3.6 v maximum operating supply voltage. It has a maximum operating temperature of +85 °c. It contains 28 pins.

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R1LV5256E Series, 256Kbit Advanced LPSRAM (32k word x 8-bit)(Technical Reference)

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You will get a confirmation email regarding your order of Renesas Electronics, R1LV5256ESA-5SI#B1 SRAM Memory, 256kbit, 55ns, 3, 3.3 28-Pin SOP. You can also check on our website or by contacting our customer support team for further order details on Renesas Electronics, R1LV5256ESA-5SI#B1 SRAM Memory, 256kbit, 55ns, 3, 3.3 28-Pin SOP.
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