NXP USA Inc. PEMH15115

PEMH15115 NXP USA Inc.
NXP USA Inc.

Product Information

Resistor - Base (R1):
4.7kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
4.7kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-666
Power - Max:
300mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PEMH15115. Resistor - Base - 4.7kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 4.7kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 npn - pre-biased (dual) type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-666 is the supplier device package value. The maximum power of the product is 300mw. The product is designated with the ear99 code number.

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PEMH,PUMH15(Datasheets)

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