NXP USA Inc. PDTB123EQA147

PDTB123EQA147 NXP USA Inc.
NXP USA Inc.

Product Information

Resistor - Base (R1):
2.2 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
500 mA
Resistor - Emitter Base (R2):
2.2 kOhms
Package / Case:
3-XDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 50mA, 5V
Frequency - Transition:
150 MHz
Vce Saturation (Max) @ Ib, Ic:
100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
PDTB123EQA
Supplier Device Package:
DFN1010D-3
Power - Max:
940 mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTB123EQA147. Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 500 ma. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 40 @ 50ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 150 mhz. The 100mv @ 2.5ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. The product pdtb123eqa, is a highly preferred choice for users. dfn1010d-3 is the supplier device package value. The maximum power of the product is 940 mw. The product is designated with the ear99 code number.

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PDTB114EQA147 Datasheet(Datasheets)

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