NXP USA Inc. PBSS5160PAP115

NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
1A
HTSUS:
0000.00.0000
Operating Temperature:
150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Frequency - Transition:
125MHz
Vce Saturation (Max) @ Ib, Ic:
340mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max):
60V
Transistor Type:
2 PNP (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
510mW
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS5160PAP115. The maximum collector current includes 1a. It is assigned with possible HTSUS value of 0000.00.0000. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 125mhz. The 340mv @ 100ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60v. The transistor is a 2 pnp (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw.

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PBSS5160PAP115 Datasheet(Datasheets)

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