NXP USA Inc. PBSS3515VS115

PBSS3515VS115 NXP USA Inc.
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
500mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 100mA, 2V
Frequency - Transition:
280MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
15V
Transistor Type:
2 PNP (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-666
Power - Max:
200mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS3515VS115. The maximum collector current includes 500ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Furthermore, 150 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 280mhz. The 250mv @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 15v. The transistor is a 2 pnp (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-666 is the supplier device package value. The maximum power of the product is 200mw. The product is designated with the ear99 code number.

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PBSS3515VS(Datasheets)

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