NXP USA Inc. NXP3875G,215

NXP3875G-215 NXP USA Inc. NXP3875G,215
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
150 mA
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT23-3 (TO-236)
Power - Max:
200 mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is NXP3875G,215. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 250mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sot23-3 (to-236) is the supplier device package value. The maximum power of the product is 200 mw. The product is designated with the ear99 code number.

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NxP3875Y,215 Datasheet(Datasheets)

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