onsemi NTR3A085PZT1G

NTR3A085PZT1G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
6.9 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
77mOhm @ 1.6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
420mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
586 pF @ 10 V
Qualification:
-
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
1.9A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTR3A085PZT1G. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 6.9 nc @ 4.5 v. It has a maximum Rds On and voltage of 77mohm @ 1.6a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 420mw (ta). The product's input capacitance at maximum includes 586 pf @ 10 v. The product is available in surface mount configuration. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 1.9a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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NTR3A085PZT1G Datasheet(Datasheets)

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