NXP USA Inc. BAV170M315

BAV170M315 NXP USA Inc.
NXP USA Inc.

Product Information

HTSUS:
8541.10.0070
Package / Case:
SC-101, SOT-883
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
150°C
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
75 V
Qualification:
AEC-Q101
Current - Average Rectified (Io) (per Diode):
320mA (DC)
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DFN1006-3
Technology:
Standard
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BAV170M315. It is assigned with possible HTSUS value of 8541.10.0070. Moreover, the product comes in sc-101, sot-883. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 150°c. It has a robust speed of standard recovery >500ns, > 200ma (io). It has a trr (reverse recovery time) of 3 µs. The product has a maximum forward voltage of 1.25 v @ 150 ma. It is shipped in bulk package . While it has maximum reverse voltage of 75 v. The average rectified current at per diode is 320ma (dc). 5 na @ 75 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn1006-3 is the supplier device package value. This product use standard technology. The product is designated with the ear99 code number.

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BAV170M(Datasheets)

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