Toshiba Semiconductor and Storage RN2412,LF

RN2412-LF Toshiba Semiconductor and Storage RN2412,LF
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
100 mA
RoHS Status:
ROHS3 Compliant
Resistor - Base (R1):
22 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
200 MHz
Package:
Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
standardLeadTime:
40 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
S-Mini
Power - Max:
200 mW
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2412,LF. The maximum collector current includes 100 ma. The product is rohs3 compliant. Resistor - Base - 22 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. It is shipped in tape & reel (tr) package . The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It has a long 40 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. The maximum power of the product is 200 mw.

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