Toshiba Semiconductor and Storage RN2426(TE85L,F)

Enrgtech Part No: ET18697653
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Manufacturer Part No:
RN2426(TE85L,F)
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Manufacturer: Toshiba Semiconductor and Storage

RN2426-TE85L-F- Toshiba Semiconductor and Storage RN2426(TE85L,F)

Product Information

Resistor - Base (R1):

1 kOhms

Current - Collector (Ic) (Max):

800 mA

HTSUS:

8541.21.0075

RoHS Status:

ROHS3 Compliant

Resistor - Emitter Base (R2):

10 kOhms

Package / Case:

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce:

90 @ 100mA, 1V

Frequency - Transition:

200 MHz

title:

RN2426(TE85L,F)

Voltage - Collector Emitter Breakdown (Max):

50 V

edacadModel:

RN2426(TE85L,F) Models

edacadModelUrl:

/en/models/10379911

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2426(TE85L,F). Resistor - Base - 1 kohms. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 90 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. The maximum collector emitter breakdown voltage of the product is 50 v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp - pre-biased type. The 250mv @ 1ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200 mw. Moreover, it corresponds to rn2426, a base product number of the product. The product is designated with the ear99 code number.

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