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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA115ES,126. Resistor - Base - 100 kohms. The maximum collector current includes 20 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 100 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 80 @ 5ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 250µa, 5ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - pre-biased type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 500 mw. Moreover, it corresponds to pdta115, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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