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This is manufactured by NXP USA Inc.. The manufacturer part number is PBRN113ZS,126. Resistor - Base - 1 kohms. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 40 v. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 500 @ 300ma, 5v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The nxp usa inc.'s product offers user-desired applications. The transistor is a npn - pre-biased type. The 1.15v @ 8ma, 800ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 700 mw. Moreover, it corresponds to pbrn113, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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