Toshiba Semiconductor and Storage RN2402S,LF(D

RN2402S-LF-D Toshiba Semiconductor and Storage RN2402S,LF(D
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Frequency - Transition:
200 MHz
Voltage - Collector Emitter Breakdown (Max):
50 V
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
S-Mini
Packaging:
Tape & Reel (TR)
Power - Max:
200 mW
Base Product Number:
RN2402
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2402S,LF(D. Resistor - Base - 10 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. The maximum collector emitter breakdown voltage of the product is 50 v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp - pre-biased type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200 mw. Moreover, it corresponds to rn2402, a base product number of the product. The product is designated with the ear99 code number.

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