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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1444ATE85LF. Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 300 ma. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 4ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 30 mhz. The maximum collector emitter breakdown voltage of the product is 20 v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a npn - pre-biased type. The 100mv @ 3ma, 30ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200 mw. Moreover, it corresponds to rn1444, a base product number of the product. The product is designated with the ear99 code number.
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