Toshiba Semiconductor and Storage RN1112(T5L,F,T)

RN1112-T5L-F-T- Toshiba Semiconductor and Storage RN1112(T5L,F,T)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
22 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Package / Case:
SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SSM
Power - Max:
100 mW
Base Product Number:
RN1112
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1112(T5L,F,T). Resistor - Base - 22 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Moreover, the product comes in sc-75, sot-416. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. ssm is the supplier device package value. The maximum power of the product is 100 mw. Moreover, it corresponds to rn1112, a base product number of the product. The product is designated with the ear99 code number.

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