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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1106MFV(TL3,T). Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sot-723. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The maximum collector emitter breakdown voltage of the product is 50 v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a npn - pre-biased type. The 300mv @ 500µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 150 mw. Moreover, it corresponds to rn1106, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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