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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1101CT(TPL3). Base Part Number: ssm6j215. It features pre-biased bipolar transistor (bjt) npn - pre-biased 20v 50ma 50mw surface mount cst3. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. Resistor - Base - 4.7 kohms. The 150mv @ 250µa, 5ma is the maximum Vce saturation. cst3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 50mw. Moreover, the product comes in sc-101, sot-883. The maximum collector current includes 50ma. In addition, 500na is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
For more information please check the datasheets.
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