Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 mW
Maximum Continuous Collector Current:
-100 mA
Maximum Emitter Base Voltage:
-10 V
Maximum Collector Emitter Voltage:
-50 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
Resistor - Base (R1):
4.7 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10mA, 5V
Frequency - Transition:
200 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
300 mW
Base Product Number:
FJN430
ECCN:
EAR99
