Fairchild Semiconductor, FJV3103RMTF NPN Digital Transistor, 100 mA 50 V 22 kΩ, Ratio Of 1, 3-Pin SOT-23

FJV3103RMTF Fairchild Semiconductor,  NPN Digital Transistor, 100 mA 50 V 22 kΩ, Ratio Of 1, 3-Pin SOT-23
FJV3103RMTF
Fairchild Semiconductor

Product Information

Minimum DC Current Gain:
56
Transistor Type:
NPN
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Continuous Collector Current:
100 mA
Maximum Emitter Base Voltage:
10 V
Maximum Collector Emitter Voltage:
50 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
0.3 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
22 kΩ
Resistor - Base (R1):
22 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
22 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
56 @ 5mA, 5V
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Power - Max:
200 mW
Base Product Number:
FJV310
ECCN:
EAR99
RoHs Compliant
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This is NPN Digital Transistor 100 mA 50 V 22 kΩ Ratio Of 1 3-Pin SOT-23 manufactured by Fairchild Semiconductor. The manufacturer part number is FJV3103RMTF. It features up to 56 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2.92 x 1.3 x 0.93mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. The product has a maximum 100 ma continuous collector current . It features a 10 v of maximum emitter base voltage. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.93mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.92mm. The package is a sort of sot-23. It consists of 1 elements per chip. The product has a maximum 0.3 v collector emitter saturation voltage . In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 22 kω input resistor . Resistor - Base - 22 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 0000.00.0000. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 22 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 56 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 500µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - pre-biased type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. sot-23-3 is the supplier device package value. The maximum power of the product is 200 mw. Moreover, it corresponds to fjv310, a base product number of the product. The product is designated with the ear99 code number.

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FJV3103R, NPN Epitaxial Silicon Transistor with Bias Resistor Data Sheet(Technical Reference)

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