Toshiba Semiconductor and Storage RN2102ACT(TPL3)

RN2102ACT-TPL3- Toshiba Semiconductor and Storage RN2102ACT(TPL3)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10 kOhms
Current - Collector (Ic) (Max):
80 mA
HTSUS:
8541.21.0095
RoHS Status:
RoHS Compliant
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
title:
RN2102ACT(TPL3)
Voltage - Collector Emitter Breakdown (Max):
50 V
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
CST3
Packaging:
Cut Tape (CT)
Power - Max:
100 mW
Base Product Number:
RN2102
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2102ACT(TPL3). Resistor - Base - 10 kohms. The maximum collector current includes 80 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The maximum collector emitter breakdown voltage of the product is 50 v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp - pre-biased type. The 150mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. cst3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100 mw. Moreover, it corresponds to rn2102, a base product number of the product. The product is designated with the ear99 code number.

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