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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1106,LF(CT. Resistor - Base - 4.7 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sc-75, sot-416. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. ssm is the supplier device package value. The maximum power of the product is 100 mw. Moreover, it corresponds to rn1106, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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