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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2427TE85LF. Resistor - Base - 2.2 kohms. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 90 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. In addition, it is reach unaffected. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp - pre-biased type. The 250mv @ 1ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200 mw. Moreover, it corresponds to rn2427, a base product number of the product. The product is designated with the ear99 code number.
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