Infineon Technologies IQD063N15NM5CGATMA1

Infineon Technologies

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
4.6V @ 159µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
9-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
6.32mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4700 pF @ 75 V
Qualification:
-
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Grade:
-
Series:
OptiMOS™ 5
Supplier Device Package:
PG-TTFN-9-U02
Current - Continuous Drain (Id) @ 25°C:
14.1A (Ta), 148A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IQD063N15NM5CGATMA1. The typical Vgs (th) (max) of the product is 4.6v @ 159µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 9-powertdfn. The maximum gate charge and given voltages include 60 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 6.32mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 0v, 10v. It is shipped in tape & reel (tr) package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 278w (tc). The product's input capacitance at maximum includes 4700 pf @ 75 v. It has a long 26 weeks standard lead time. The product is available in surface mount configuration. The product optimos™ 5, is a highly preferred choice for users. pg-ttfn-9-u02 is the supplier device package value. The continuous current drain at 25°C is 14.1a (ta), 148a (tc). This product use mosfet (metal oxide) technology.

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