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This is ON Semiconductor IGBT 80 A 650 V 3-Pin TO-247 manufactured by onsemi. The manufacturer part number is AFGHL50T65SQD. Provides up to 268 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 30 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±30.0v gate emitter voltage . The package is a sort of to-247. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.1v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 20ns/81ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 102 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 950µj (on), 460µj (off). Test condition included 400v, 50a, 4.7ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. It has a long 21 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product is automotive, a grade of class. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 268 w. Moreover, it corresponds to afghl50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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