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This is IGBT manufactured by STMicroelectronics. The manufacturer part number is STGF30H65DFB2. Provides up to 50 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220fp. It contains 3 pins. The maximum collector current includes 50 a. It has a trr (reverse recovery time) of 115 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.1v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 18.4ns/71ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3 full pack. Features 90 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 270µj (on), 310µj (off). Test condition included 400v, 30a, 6.8ohm, 15v. The stmicroelectronics's product offers user-desired applications. It has a long 15 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-220fp is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 50 w. Moreover, it corresponds to stgf30, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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