Microsemi Corporation APT44GA60BD30C

APT44GA60BD30C Microsemi Corporation
Microsemi Corporation

Product Information

Gate Charge:
128nC
Td (on/off) @ 25°C:
16ns/102ns
Detailed Description:
IGBT PT 600V 78A 337W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
78A
Series:
POWER MOS 8™
Vce(on) (Max) @ Vge, Ic:
1.6V @ 15V, 26A
Supplier Device Package:
TO-247 [B]
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
409µJ (on), 450µJ (off)
Power - Max:
337W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
400V, 26A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm):
130A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT44GA60BD30C. Features 128nc gate charge. Td (on/off) value of 16ns/102ns. It features igbt pt 600v 78a 337w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 78a. The product power mos 8™, is a highly preferred choice for users. Features 1.6v @ 15v, 26a. to-247 [b] is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 409µj (on), 450µj (off). The maximum power of the product is 337w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 26a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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APT44GA60xD30C(Datasheets)

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