Toshiba Semiconductor and Storage GT50J121(Q)

Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
Switching Energy:
1.3mJ (on), 1.34mJ (off)
Vce(on) (Max) @ Vge, Ic:
2.45V @ 15V, 50A
Td (on/off) @ 25°C:
90ns/300ns
Operating Temperature:
150°C (TJ)
Input Type:
Standard
Package / Case:
TO-3PL
Voltage - Collector Emitter Breakdown (Max):
600 V
Test Condition:
300V, 50A, 13Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
-
Current - Collector Pulsed (Icm):
100 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(LH)
Power - Max:
240 W
Base Product Number:
GT50J121
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT50J121(Q). The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. Provide switching energy up to 1.3mj (on), 1.34mj (off). Features 2.45v @ 15v, 50a. Td (on/off) value of 90ns/300ns. The product has 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3pl. The maximum collector emitter breakdown voltage of the product is 600 v. Test condition included 300v, 50a, 13ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p(lh) is the supplier device package value. The maximum power of the product is 240 w. Moreover, it corresponds to gt50j121, a base product number of the product. The product is designated with the ear99 code number.

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EOL 08/Nov/2013(PCN Obsolescence/ EOL)

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